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| Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base emitter DESCRIPTION LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 800 400 10 8 12 4 100 -55~150 ae UNIT V V V A A A W JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=0.1A IB=20mA IC=1A IB=0.2A IC=2A IB=0.4A IC=3A IB=0.6A IC=1A IB=0.2A IC=2A IB=0.4A IC=3A IB=0.6A VCB=800V IE=0 TC=125ae VCE=400V IB=0 VEB=9V IC=0 TC=125ae IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=3A ; VCE=1V TC=125ae IC=0.2A ; VCE=4V VCB=20V ;f=1MHz 20 15 10 5 20 40 MIN 400 800 10 TYP. SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 VBEsat-1 VBEsat-2 VBEsat-3 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 fT Cob BUL52B MAX UNIT V V V 0.1 0.2 0.3 0.5 1.0 1.1 1.2 10 100 |I |I |I 100 10 100 V V V V V V V A A A 45 MHz pF JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE BUL52B Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic |
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